Infrastructure for Detector Research and Development towards the International Linear Collider

The EUDET-project was launched to create an infrastructure for developing and testing new and advanced detector technologies to be used at a future linear collider. The aim was to make possible experimentation and analysis of data for institutes, which otherwise could not be realized due to lack of resources. The infrastructure comprised an analysis and software network, and instrumentation infrastructures for tracking detectors as well as for calorimetry.Comment: 54 pages, 48 picture

Belle II Technical Design Report

The Belle detector at the KEKB electron-positron collider has collected almost 1 billion Y(4S) events in its decade of operation. Super-KEKB, an upgrade of KEKB is under construction, to increase the luminosity by two orders of magnitude during a three-year shutdown, with an ultimate goal of 8E35 /cm^2 /s luminosity. To exploit the increased luminosity, an upgrade of the Belle detector has been proposed. A new international collaboration Belle-II, is being formed. The Technical Design Report presents physics motivation, basic methods of the accelerator upgrade, as well as key improvements of the detector.Comment: Edited by: Z. Dole\v{z}al and S. Un

Research and Design of a Routing Protocol in Large-Scale Wireless Sensor Networks

无线传感器网络，作为全球未来十大技术之一，集成了传感器技术、嵌入式计算技术、分布式信息处理和自组织网技术，可实时感知、采集、处理、传输网络分布区域内的各种信息数据，在军事国防、生物医疗、环境监测、抢险救灾、防恐反恐、危险区域远程控制等领域具有十分广阔的应用前景。 本文研究分析了无线传感器网络的已有路由协议，并针对大规模的无线传感器网络设计了一种树状路由协议，它根据节点地址信息来形成路由，从而简化了复杂繁冗的路由表查找和维护，节省了不必要的开销，提高了路由效率，实现了快速有效的数据传输。 为支持此路由协议本文提出了一种自适应动态地址分配算——ADAR（AdaptiveDynamicAddre...As one of the ten high technologies in the future, wireless sensor network, which is the integration of micro-sensors, embedded computing, modern network and Ad Hoc technologies, can apperceive, collect, process and transmit various information data within the region. It can be used in military defense, biomedical, environmental monitoring, disaster relief, counter-terrorism, remote control of haz...学位：工学硕士院系专业：信息科学与技术学院通信工程系_通信与信息系统学号：2332007115216

Backside doping profiles of irradiated silicon detectors 2013 JINST 8 P04019 PUBLISHED BY IOP PUBLISHING FOR SISSA MEDIALAB Backside doping profiles of irradiated silicon detectors

ABSTRACT: Silicon detectors are used in High Energy Physics (HEP) experiments as tracking and vertexing devices. The damage caused by radiation is of special interest for sensors to be used at the HL-LHC. The doping profiles of highly irradiated sensors can neither be measured with common capacitance voltage methods nor with methods of chemical analysis. Nevertheless, they need to be known for damage modelling or for simulations of the sensor performance. In this paper it is shown that highly neutron irradiated doping profiles can be measured by using a spreading resistance probe technique. It turned out that the implantation depth of the profiles of active dopants decreases with increasing fluences

Détecteur d'avalanche à faible gain à particules à faible pénétration

[EN] The low-penetrating particles low gain avalanche detector comprises a multi-layered structure and receives particles from a radiation source (13). It consists of a thin entry region that receives the particles from the radiation source (13); a low-penetrating particles detection region, with a p++ shallow field stop (1), positioned beneath the entry region, and a p absorption layer (3), positioned beneath the p++ shallow field stop (1), and an n multiplication layer (4); and a high-penetrating particles detection region positioned beneath the n multiplication layer (4), consisting of a n-- silicon substrate (5). Due to the chosen doping polarities, the primary electrons (created by the particles from the radiation source (13)) drift away from the entry region. That way, signals from low-penetrating particles or radiation experience amplification, while the noise is kept similar to a conventional PIN structure, thus increasing the signal-to-noise ratio.[FR] Le détecteur d'avalanche à faible gain à particules à faible pénétration comprend une structure multicouche et reçoit des particules d'une source de rayonnement (13). Il est constitué d'une région d'entrée mince qui reçoit les particules de la source de rayonnement (13) ; d'une région de détection de particules à faible pénétration, ayant un diaphragme de champ peu profond p++ (1), positionnée sous la région d'entrée, et d'une couche d'absorption de type p (3), positionnée sous le diaphragme de champ peu profond p++ (1), et d'une couche de multiplication n (4) ; et d'une région de détection de particules à pénétration élevée positionnée sous la couche de multiplication n (4), constituée d'un substrat de silicium n-- (5). En raison des polarités de dopage choisies, les électrons primaires (créés par les particules provenant de la source de rayonnement (13)) dérivent de la région d'entrée. De cette manière, des signaux provenant de particules à faible pénétration ou d'une amplification d'expérience de rayonnement, tandis que le bruit reste similaire à une structure PIN classique, augmentent le rapport signal sur bruit.NoConsejo Superior de Investigaciones Científicas, Österreichische Akademie Der WissenschaftenA1 Solicitud de patente con informe sobre el estado de la técnic

Détecteur d'avalanche à faible gain de particules à faible pouvoir pénétrant

The low-penetrating particles low gain avalanche detector comprises a multi-layered structure and receives particles from a radiation source (13). It consists of a thin entry region that receives the particles from the radiation source (13); a low-penetrating particles detection region, with a p++ shallow field stop (1), positioned beneath the entry region, and a p absorption layer (3), positioned beneath the p++ shallow field stop (1), and an n multiplication layer (4); and a high-penetrating particles detection region positioned beneath the n multiplication layer (4), consisting of a n-- silicon substrate (5). Due to the chosen doping polarities, the primary electrons (created by the particles from the radiation source (13)) drift away from the entry region. That way, signals from low-penetrating particles or radiation experience amplification, while the noise is kept similar to a conventional PIN structure, thus increasing the signal-to-noise ratio.NoConsejo Superior de Investigaciones Científicas, Österreichische Akademie Der WissenschaftenA1 Solicitud de patente con informe sobre el estado de la técnic

Forward tracking at the next e+e- collider part II: experimental challenges and detector design

Published under the terms of the Creative Commons Attribution 3.0 License.We present the second in a series of studies into the forward tracking system for a future linear e+e- collider with a center-of-mass energy in the range from 250 GeV to 3 TeV. In this note a number of specific challenges are investigated, which have caused a degradation of the tracking and vertexing performance in the forward region in previous experiments. We perform a quantitative analysis of the dependence of the tracking performance on detector design parameters and identify several ways to mitigate the performance loss for charged particles emitted at shallow angle.© CERN 2013.This work has been partly supported by Grants FPA2010-22163-C02-01 and FPA2010-21549-C04-4 of the Spanish Ministry of Economy and Competitiveness; and by the European Commission within Framework Programme 7 Capacities, Grant Agreement 262025 (AIDA).Peer Reviewe

Optimization of Strip Isolation for Silicon Sensors

Precision machines like electron-positron-colliders and b-factories demand for low material budget and high position resolution when it comes to particle tracking. A low material budget can be achieved by using thin double-sided silicon detectors (DSSDs) and lightweight construction. Since thin sensors give low signals, one has to be very careful to achieve high charge collection efficiency, which requires an appropriate sensor design. In this paper we present a detailed investigation of different p-stop patterns used for strip isolation on the n-side of double-sided microstrip sensors with n-type bulk. We designed test sensors featuring the common p-stop, the atoll p-stop and a combined p-stop pattern, and for every pattern four different geometric layouts were considered. These sensors were tested at the Super Proton Synchrotron (SPS) at CERN (Geneva, Switzerland) in a 120 GeV/c hadron beam. Then they were irradiated to 700 kGy with a 60Co source and subsequently tested in the same beam as before. One geometric layout of the atoll p-stop pattern turned out to perform best, both before and after irradiation. The conclusions of these tests will be applied to the design of DSSDs for the Belle II experiment at KEK (Tsukuba, Japan)